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2N6510 Dataheets PDF



Part Number 2N6510
Manufacturers SavantIC
Logo SavantIC
Description Silicon Power Transistor
Datasheet 2N6510 Datasheet2N6510 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N6510 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive switching circuits PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Coll.

  2N6510   2N6510



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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N6510 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive switching circuits PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 250 200 7 7 14 120 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N6510 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 200 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.4A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A VCE=250V; VBE(off)=-1.5V TC=100 VEB=7V; IC=0 1.5 0.1 1.5 0.1 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=4A ; VCE=3V 10 50 fT Transition frequency IC=0.5A ; VCE=10V 3 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6510 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .


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