FLK207XV Chips Datasheet

FLK207XV Datasheet, PDF, Equivalent


Part Number

FLK207XV

Description

GaAs FET & HEMT Chips

Manufacture

Eudyna Devices

Total Page 4 Pages
Datasheet
Download FLK207XV Datasheet


FLK207XV
FEATURES
wHwwig.DhatOaSuhtepeut4tUP.coomwer: P1dB = 32.5dBm(Typ.)
High Gain: G1dB = 6.0dB(Typ.)
High PAE: ηadd = 27%(Typ.)
Proven Reliability
FLK207XV
GaAs FET & HEMT Chips
Drain
Drain
Drain
Drain
DESCRIPTION
The FLK207XV chip is a power GaAs FET that is
designed for general purpose applications in the
Ku-Band frequency range as it provides superior
power, gain, and efficiency.
Gate
Gate
Gate
Fujitsu’s stringent Quality Assurance Program assures the
highest reliability and consistent performance
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Ptot
Tstg
Tch
Tc = 25°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.0 mA respectively with
gate resistance of 250.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
12.5
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 500mA
-
-
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB
Gain Compression Point
Vp
VGSO
P1dB
Power Gain at 1dB
Gain Compression Point
G1dB
VDS = 5V, IDS = 40mA
IGS = -40µA
VDS = 10V
IDS 0.6IDSS
f = 14.5GHz
-1.0
-5
31.5
5
Limit
Typ. Max.
800 1200
400 -
-2.0 -3.5
--
32.5 -
6-
Power-added Efficiency
ηadd
-
Thermal Resistance
Rth Channel to Case
-
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
27 -
10 12
Unit
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
%
°C/W
Edition 1.3
July 1999
1

FLK207XV
FLK207XV
GaAs FET & HEMT Chips
www.DataShePetO4UW.cEomR DERATING CURVE
16
12
8
4
0 50 100 150 200
Case Temperature (°C)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1000
800 VGS =0V
600 -0.5V
400 -1.0V
-1.5V
200
-2.0V
24
6 8 10
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
VDS=10V
32 IDS0.6IDSS
f = 14.5GHz
30
Pout
28
26
24
ηadd
16 18 20 22 24 26 28
Input Power (dBm)
40
20
P1dB & ηadd vs. VDS
f = 14.5GHz
33 IDS0.6IDSS
32
P1dB
31
ηadd
30
29
8 9 10
Drain-Source Voltage (V)
40
30
20
10
2


Features FLK207XV GaAs FET & HEMT Chips FEATURES •www.DataSheet4U.com High Output Powe r: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd = 27%(Typ.) • Proven Reliability Dra in Drain Drain Drain DESCRIPTION Th e FLK207XV chip is a power GaAs FET tha t is designed for general purpose appli cations in the Ku-Band frequency range as it provides superior power, gain, an d efficiency. Fujitsu’s stringent Qua lity Assurance Program assures the high est reliability and consistent performa nce ABSOLUTE MAXIMUM RATING (Ambient Te mperature Ta=25°C) Item Drain-Source V oltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg T ch Condition Rating 15 -5 Tc = 25°C 12 .5 -65 to +175 175 Unit V V W °C °C G ate Gate Gate Fujitsu recommends the f ollowing conditions for the reliable op eration of GaAs FETs: 1. The drain-sour ce operating voltage (VDS) should not e xceed 10 volts. 2. The forward and reverse gate currents should not exceed 17..
Keywords FLK207XV, datasheet, pdf, Eudyna Devices, GaAs, FET, &, HEMT, Chips, LK207XV, K207XV, 207XV, FLK207X, FLK207, FLK20, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)