2SK2869 FET Datasheet

2SK2869 Datasheet, PDF, Equivalent


Part Number

2SK2869

Description

Silicon N Channel MOS FET

Manufacture

Renesas Technology

Total Page 9 Pages
Datasheet
Download 2SK2869 Datasheet


2SK2869
2SK2869(L), 2SK2869(S)
www.DataSheet4U.com
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 0.033 typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
REJ03G1037-0200
(Previous: ADE-208-570)
Rev.2.00
Sep 07, 2005
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4D
12 3
G
1
23
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 8

2SK2869
2SK2869(L), 2SK2869(S)
Absolute Maximum Ratings
www.DataSheet4U.com
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
60
±20
20
80
20
20
34
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
60
±20
1.5
10
Typ
0.033
0.055
16
740
380
140
10
110
105
120
1.0
40
Max
±10
10
2.5
0.045
0.07
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V*4
ID = 10 A, VGS = 4 V*4
ID = 10 A, VDS = 10 V*4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 10 A, VGS = 10 V,
RL = 3
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0
diF/ dt = 50A/µs
Rev.2.00 Sep 07, 2005 page 2 of 8


Features www.DataSheet4U.com 2SK2869(L), 2SK2869 (S) Silicon N Channel MOS FET High Spee d Power Switching REJ03G1037-0200 (Prev ious: ADE-208-570) Rev.2.00 Sep 07, 200 5 Features • Low on-resistance RDS = 0.033 Ω typ. • High speed switchin g • 4 V gate drive device can be driv en from 5 V source Outline RENESAS Pac kage code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: P RSS0004ZD-C (Package name: DPAK(S)) 4 G 1 2 3 D 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 8 2SK2869(L), 2SK2869(S) A bsolute Maximum Ratings www.DataSheet4U .com (Ta = 25°C) Symbol VDSS VGSS ID ID(pulse)*1 IDR IAP*3 EAR*3 Pch*2 Tch T stg Ratings 60 ±20 20 80 20 20 34 30 1 50 –55 to +150 Unit V V A A A A mJ W °C °C Item Drain to source voltage G ate to source voltage Drain current Dra in peak current Body to drain diode rev erse drain current Avalanche current Av alanche energy Channel dissipation Chan nel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2..
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