2N6675 Transistor Datasheet

2N6675 Datasheet, PDF, Equivalent


Part Number

2N6675

Description

(2N6674 / 2N6675) Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6675 Datasheet


2N6675
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6674 2N6675
DESCRIPTION
·With TO-3 package
·High voltage,high speed
APPLICATIONS
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Deflection circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N6674
2N6675
Open emitter
VCEO
Collector-emitter voltage
2N6674
2N6675
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
IB Base current
PT Total Power Dissipation
Tj Junction temperature
Ta=25
TC=25
Tstg Storage temperature
VALUE
450
650
300
400
7
15
5
6
175
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.0
UNIT
/W

2N6675
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6674 2N6675
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6674
2N6675
IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A
VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=5A
VBEsat Base-emitter saturation voltage
IC=10A; IB=2A
2N6674 VCB=450V; IE=0
ICBO Collector cut-off current
2N6675 VCB=650V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=3V
hFE-2
DC current gain
IC=10A ; VCE=2V
fT Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
MIN TYP. MAX UNIT
300
V
400
1.0 V
5.0 V
1.5 V
0.1 mA
1.0 mA
15 40
8 20
15 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3 package ·High voltage,high speed AP PLICATIONS ·Switching regulators ·Inv erters ·Solenoid and relay drivers ·D eflection circuits PINNING PIN 1 2 3 Ba se Emitter Collector DESCRIPTION 2N667 4 2N6675 Fig.1 simplified outline (TO- 3) and symbol Absolute maximum ratings (Ta= ) SYMBOL PARAMETER 2N6674 VCBO Col lector-base voltage 2N6675 2N6674 VCEO Collector-emitter voltage 2N6675 VEBO I C IB Emitter-base voltage Collector cur rent Base current Ta=25 PT Total Power Dissipation TC=25 Tj Tstg Junction temp erature Storage temperature 175 200 -65 ~200 Open collector Open base 400 7 15 5 6 W V A A Open emitter 650 300 V COND ITIONS VALUE 450 V UNIT THERMAL CHARAC TERISTICS SYMBOL Rth j-c PARAMETER Ther mal resistance junction to case VALUE 1 .0 UNIT /W SavantIC Semiconductor www. DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N6674 2N6675 CHARACTERISTICS Tj=25 .
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