SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2N6686
DESCRIPTION ·W...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2N6686
DESCRIPTION ·With TO-3 package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For power supplies and other high-voltage switching applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 260 160 8 25 50 8 200 200 -65~200 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2N6686
SYMBOL
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
160
V
VCEsat
Collector-emitter saturation voltage
IC=25A; IB=2.5A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=25A; IB=2.5A
1.8
V
ICEV
Collector cut-off current
VCE=260V; VBE=-1.5V
50
µA
IEBO
Emitter cut-off current
VEB=8V; IC=0
100
µA
hFE-1
DC current gain
IC=1A ; VCE=2V
30
hFE-2
DC current gain
IC=10A ; VCE=2V
25
100
hFE-3
DC ...