2N6686 Transistor Datasheet

2N6686 Datasheet, PDF, Equivalent


Part Number

2N6686

Description

Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6686 Datasheet


2N6686
SavantIC Semiconductor
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Product Specification
2N6686
DESCRIPTION
·With TO-3 package
·Fast switching speed
·Low collector saturation voltage
APPLICATIONS
·For power supplies and other high-voltage
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
260
160
8
25
50
8
200
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
0.875
UNIT
/W

2N6686
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat Collector-emitter saturation voltage IC=25A; IB=2.5A
VBEsat
Base-emitter saturation voltage
IC=25A; IB=2.5A
ICEV Collector cut-off current
VCE=260V; VBE=-1.5V
IEBO Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=10A ; VCE=2V
hFE-3
DC current gain
fT Transition frequency
IC=25A ; VCE=2V
IC=1A ; VCE=10V
Product Specification
2N6686
MIN TYP. MAX UNIT
160 V
1.5 V
1.8 V
50 µA
100 µA
30
25 100
15
20 100 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2N6686 DESCRIPTION ·With TO-3 package ·Fast switching sp eed ·Low collector saturation voltage APPLICATIONS ·For power supplies and o ther high-voltage switching application s PINNING PIN 1 2 3 Base Emitter Collec tor Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum r atings(Ta= ) SYMBOL VCBO VCEO VEBO IC I CM IB PC Tj Tstg PARAMETER Collector-ba se voltage Collector-emitter voltage Em itter-base voltage Collector current Co llector current-peak Base current Colle ctor power dissipation Junction tempera ture Storage temperature TC=25 CONDITIO NS Open emitter Open base Open collecto r VALUE 260 160 8 25 50 8 200 200 -65~2 00 UNIT V V V A A A W THERMAL CHARACTE RISTICS SYMBOL Rth j-c PARAMETER Therma l resistance junction to case VALUE 0.8 75 UNIT /W SavantIC Semiconductor www. DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwi.
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