SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-22...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-220 package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·Designed for converters,inverters, pulse-width-modulated
regulators and a variety of power switching circuits.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2N6702
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 90 7 7 10 6 50 150 -65~150 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2N6702
SYMBOL
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA ;IB=0
90
V
VCEsat-1
Collector-emitter saturation voltage
IC=5A;IB=0.5A
0.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=7A;IB=0.7A
1.5
V
VBE sat
Base-emitter saturation voltage
IC=5A;IB=0.5A VCE=140V;VBE=1.5V TC=125 VEB=7V; IC=0
1.5 0.1 1.0 0.1
V
ICEV
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1...