Power Transistor. 2N6752 Datasheet

2N6752 Transistor. Datasheet pdf. Equivalent

Part 2N6752
Description (2N6751 / 2N6752) Silicon Power Transistor
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DES.
Manufacture SavantIC
Datasheet
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2N6752
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6751 2N6752
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Low saturation voltage
·Fast switching speed
APPLICATIONS
·Off-line power supplies
·High-voltage inverters
·Switching regulators
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6751
2N6752
VCEO
Collector-emitter voltage
2N6751
2N6752
VEBO
IC
IB
PD
Tj
Tstg
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
800
850
400
450
8
10
5
150
-65~175
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.0
UNIT
/W



2N6752
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6751 2N6752
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6751
2N6752
IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=1A
VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=3A
VBEsat
ICEV
IEBO
Base-emitter saturation voltage
IC=5A ;IB=1A
Collector cut-off current
2N6751
2N6752
VCE=800V; VBE=-1.5V
TC=100
VCE=850V; VBE=-1.5V
TC=100
Emitter cut-off current
VEB=8V; IC=0
hFE DC current gain
IC=5A ; VCE=3V
COB Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
fT Transition frequency
IC=0.2A ; VCE=10V
MIN TYP. MAX UNIT
400
V
450
1.0 V
3.0 V
1.3 V
0.1
1.0
mA
0.1
1.0
2.0 mA
8 40
50 250 pF
15 60 MHz
2





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