Power Transistor. 2N6754 Datasheet

2N6754 Transistor. Datasheet pdf. Equivalent

Part 2N6754
Description (2N6753 / 2N6754) Silicon Power Transistor
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DES.
Manufacture SavantIC
Datasheet
Download 2N6754 Datasheet

2N6754 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05 2N6754 Datasheet
SavantIC Semiconductor www.DataSheet4U.com Product Specific 2N6754 Datasheet
2N6754 Datasheet
Recommendation Recommendation Datasheet 2N6754 Datasheet




2N6754
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6753 2N6754
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Low saturation voltage
·Fast switching speed
APPLICATIONS
·Off-line power supplies
·High-voltage inverters
·Switching regulators
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N6753
2N6754
Open emitter
VCEO
VEBO
IC
IB
PD
Tj
Tstg
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
Open base
Open collector
TC=25
VALUE
900
1000
500
8
10
5
150
-65~175
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.0
UNIT
/W



2N6754
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6753 2N6754
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
500
V
VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=1A
1.0 V
VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=3A
3.0 V
VBEsat
ICEV
IEBO
Base-emitter saturation voltage
IC=5A ;IB=1A
Collector cut-off current
2N6753
2N6754
VCE=900V; VBE=-1.5V
TC=100
VCE=1000V; VBE=-1.5V
TC=100
Emitter cut-off current
VEB=8V; IC=0
1.3 V
0.1
1.0
mA
0.1
1.0
2.0 mA
hFE DC current gain
IC=5A ; VCE=3V
8 40
COB Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
50
250 pF
fT Transition frequency
IC=0.2A ; VCE=10V
15 60 MHz
2





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