SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2N6931 2N6932
DESCRIP...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2N6931 2N6932
DESCRIPTION ·With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching
regulators
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO PARAMETER 2N6931 Collector-base voltage 2N6932 2N6931 VCEO VEBO IC ICM IB IBM IE IEM PC Tj Tstg Collector-emitter voltage 2N6932 Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Emitter current Emitter current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 400 8 10 15 5 7 15 22 150 150 -65~150 V A A A A A A W Open emitter 650 300 V CONDITIONS VALUE 450 V UNIT
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6931 IC=0.2A ;L=25mH 2N6932 IE=50mA ;IC=0 IC=10A ;IB=2A TC=100 IC=10A ;IB=2A TC=100 VCE=450V; VBE=-1.5V TC=100 VCE=650V; VBE=-1.5V TC=100 VEB=8V; IC=0 IC=10A ; VCE=3V f=1MHz;VCB=10V CONDITIONS SYMBOL
2N6931 2N6932
MIN 300
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
V 400 8 1.0 2.0 1.5 1.5 0.1 1.0 0.1 1.0 2 8 80 35 300 pF V V V
V(BR)EBO VCEsat VBEsat
Emitter-base breakdown voltage Collector-emitter saturation voltage B...