K3326

DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3326 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3326 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES Low gate charge : QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) Gate voltage rating : ±30 V Low on-state resistance : RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A) Avalanche capability ratings Isolated TO-220(MP-45F) package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tch Tstg 500 ±30 ±10 ±40 40 2.0 150 –55 to +150 10 10.7 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additi...