P5504EVG

NIKO-SEM www.DataSheet4U.com P-Channel Logic Level Enhancement Mode Field Effect Transistor P5504EVG SOP-8 Lead-Free D PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55m ID -5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS LIMITS -40 ±20 -5.5 -4.5 -20 2.5 1.3 -55 to 150 275 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 1 °C SYMBOL RθJA TYPICAL MAXIMUM 50 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -4.5V, ID = -4.5A VGS = -10V, ID = -5.5A VDS = -10V, ID = -5.5A -20 65 38 11 94 55 -40 -1 -1.5 -2.5 ±250 nA 1 10 µA A m S V LIMITS UNIT MIN TYP MAX SEP-30-...