HN7G01FE

HN7G01FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G01FE Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 (transistor): 2SA1955 equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA 1. 2. 3. 4. 5. 6. EMITTER BASE DRAIN SOURCE GATE COLLECTOR Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEDEC JEITA TOSHIBA ― ― 2-2N1F Weight: 0.003 g (typ.) Q1, Q2 Common Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P (Note 1) Tj Tstg Rating 100 125 −55~125 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e....