HN7G02FE
TOSHIBA Multichip Discrete Device
www.DataSheet4U.com
HN7G02FE
Unit: mm
Power Management Switch Applications,...
HN7G02FE
TOSHIBA Multichip Discrete Device
www.DataSheet4U.com
HN7G02FE
Unit: mm
Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
Q1 (
transistor): RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent
Q1 (
Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −5 −100 Unit V V V mA
1. 2. 3. 4. 5. 6.
EMITTER BASE DRAIN SOURCE GATE COLLECTOR
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Gate-source voltage DC drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA
JEDEC JEITA TOSHIBA
― ― 2-2N1F
Weight:0.003g (typ.)
Q1, Q2 Common Ratings (Ta = 25°C)
Characteristic Power dissipation Junction temperature Storage temperature range Symbol P (Note 1) Tj Tstg Rating 100 150 −55~150 Unit mW °C °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability d...