HN7G02FU

HN7G02FU TOSHIBA Multi Chip Discrete Device www.DataSheet4U.com HN7G02FU Unit: mm Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Q1 (transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −5 −100 Unit V V V mA Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEDEC JEITA TOSHIBA Weight: g (typ.) ― ― ― Q1, Q2 Common Ratings (Ta = 25°C) Marking Characteristics Collector power dissipation Junction temperature Storage temperature range Symbol PC (Note 1) Tj Tstg Rating 200 150 −55~150 Unit mW °C °C FT Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum Equivalent ratings. Please design the appropriate reliability upon reviewing the Toshiba 6 5 Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test repor...