HN7G03FU

HN7G03FU TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 (transistor) Q2 (S-MOS) : 2SA1955 equivalent : SSM3K04FU equivalent Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA US6 JEDEC JEITA TOSHIBA 1.EMITTER 2.BASE 3.DRAIN 4.SOURCE 5.GATE 6.COLLECTOR ― ― 2-2J1E Weight: 6.8 mg (typ.) Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 100 Unit V V mA Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg Rating 200 125 −55~125 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test r...