HN7G04FU

HN7G04FU TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G04FU Unit: mm General-Purpose Amplifier Applications Driver Circuit Applications Switching and Muting Switch Applications Q1: 2SA1954 equivalent Q2: RN1307 equivalent Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA 1.EMITTER 2.BASE 3.COLLECTOR 4.EMITTER 5.BASE 6.COLLECTOR JEDEC JEITA TOSHIBA ― ― (E1) (B1) (C2) (E2) (B2) (C1) Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 6 100 Unit V V V mA 2-2J1A Weight: 0.0068 g (typ.) Marking Type Name hFE Rank Q1, Q2 Common Ratings (Ta = 25°C) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC (Note 1) Tj Tstg Rating 200 150 −55~150 Unit mW °C °C 9A Equivalent Circuit (top view) 6 5 4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconducto...