HN7G08FE

HN7G08FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G08FE Unit: mm General-Purpose Amplifier Applications Switching and Muting Switch Applications Q1 Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA Large collector current: IC = −400 mA (max) Q1: 2SA1955F Q2: RN1106F Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA (E1) 1. EMITTER1 (B1) 2. BASE1 3. COLLECTOR2 (C2) (E2) 4. EMITTER2 (B2) 5. BASE2 6. COLLECTOR1 (C1) JEDEC JEITA TOSHIBA Weight: 0.003 g (typ.) ― ― 2-2J1E Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 5 100 Unit V V V mA Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC* Tj Tstg Rating 100 150 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewi...