HN7G09FE

HN7G09FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G09FE Unit: mm Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Q1 (transistor): RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 10 100 Unit V V V mA Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 ± 20 100 200 Unit V V mA 1. 2. 3. 4. 5. 6. EMITTER BASE DRAIN SOURCE GATE COLLECTOR JEDEC JEITA TOSHIBA ― ― 2-2J1A Weight:0.003 g (typ.) Q1, Q2 Common Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol PC (Note 1) Tj Tstg Rating 100 150 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and indi...