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K2599 Dataheets PDF



Part Number K2599
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SK2599
Datasheet K2599 DatasheetK2599 Datasheet (PDF)

2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) www.DataSheet4U.com 2SK2599 Unit: mm : RDS (ON) = 2.9 Ω (typ.) : |Yfs| = 1.7 S (typ.) Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gat.

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2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) www.DataSheet4U.com 2SK2599 Unit: mm : RDS (ON) = 2.9 Ω (typ.) : |Yfs| = 1.7 S (typ.) Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 2 5 12 1.3 112 2 0.13 150 −55~150 Unit V V V A A A Pulse (t = 1 ms) (Note 1) Pulse (t = 100 μs) (Note 1) JEDEC W mJ A mJ °C °C ― ― 2-8M1B Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEITA TOSHIBA Weight: 0.54 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch−a) Max 96.1 Unit °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 48.4 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-02 2SK2599 Electrical Characteristics (Ta = 25°C) www.DataSheet4U.com Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 2 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VGS = 0 V VDS = 500 V, VDS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min — ±30 — 500 2.0 — 0.8 — — — — Typ. — — — — — 2.9 1.7 380 40 120 15 Max ±10 — 100 — 4.0 3.2 — — — — — pF Unit μA V μA V V Ω S Turn−on time Switching time Fall time — 25 — ns — 20 — Turn−off time Total gate charge (Gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) c.


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