Document
2SK2599
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
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2SK2599
Unit: mm : RDS (ON) = 2.9 Ω (typ.) : |Yfs| = 1.7 S (typ.)
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode
: IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 2 5 12 1.3 112 2 0.13 150 −55~150 Unit V V V A A A
Pulse (t = 1 ms) (Note 1) Pulse (t = 100 μs) (Note 1)
JEDEC
W mJ A mJ °C °C
― ― 2-8M1B
Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEITA TOSHIBA
Weight: 0.54 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient Symbol Rth (ch−a) Max 96.1 Unit °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 48.4 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-02
2SK2599
Electrical Characteristics (Ta = 25°C)
www.DataSheet4U.com Characteristics
Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 2 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VGS = 0 V VDS = 500 V, VDS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min — ±30 — 500 2.0 — 0.8 — — — — Typ. — — — — — 2.9 1.7 380 40 120 15 Max ±10 — 100 — 4.0 3.2 — — — — — pF Unit μA V μA V V Ω S
Turn−on time Switching time Fall time
—
25
— ns
—
20
—
Turn−off time Total gate charge (Gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) c.