2SA653

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA653 DESCRIPTION ·With TO-66 package ·High voltage: VCEO=-120V(min) APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -150 -120 -6 -1.0 15 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA653 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-1mA ;IE=0 IC=-0.5A; IB=-50mA IC=-0.5A; IB=-50mA VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-5V IC=-0.1A ; VCE=-10V -120 V Collector-base breakdown voltage -150 V Collector-emitter saturation voltage -1.5 V Base-emitter saturation voltage -2.0 V Collector cut-off current -10 µA Emitter cut-off current -10 µA DC current gain 40 Transition frequency 15 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transi...