SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SA985 2SA985A
DESCRI...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
2SA985 2SA985A
DESCRIPTION ·With TO-220 package ·Complement to type 2SC2275/2275A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER 2SA985 VCBO Collector-base voltage 2SA985A 2SA985 VCEO Collector-emitter voltage 2SA985A VEBO IC ICM IB Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open collector Open base -150 -5 -1.5 -3.0 -0.3 1.5 W V A A A Open emitter -150 -120 V CONDITIONS VALUE -120 V UNIT
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
2SA985 2SA985A
SYMBOL
MIN
TYP.
MAX
UNIT
2SA985 V(BR)CEO Collector-emitter breakdown voltage 2SA985A IC=-25mA ,IB=0
-120 V -150
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-0.3
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-1A; IB=-0.1A
-0.9
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-1.0
µA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1.0
µA
hFE-1
DC current gain
IC=-5mA ; VCE=-5V
35
hFE-2
DC current gain
...