2SA1006A Transistors Datasheet

2SA1006A Datasheet, PDF, Equivalent


Part Number

2SA1006A

Description

Silicon POwer Transistors

Manufacture

SavantIC

Total Page 5 Pages
Datasheet
Download 2SA1006A Datasheet


2SA1006A
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA1006 2SA1006A 2SA1006B
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2336,
2SC2336A,2SC2336B
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
·
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SA1006
VCBO
Collector-base voltage
2SA1006A Open emitter
2SA1006B
2SA1006
VCEO
Collector-emitter voltage
2SA1006A
2SA1006B
Open base
VEBO
IC
ICM
PT
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-Peak
Total power dissipation
Junction temperature
Storage temperature
Open collector
Ta=25
TC=25
VALUE
-180
-200
-250
-180
-200
-250
-5
-1.5
-3.0
1.5
25
150
-55~150
UNIT
V
V
V
A
A
W

2SA1006A
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA1006 2SA1006A 2SA1006B
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
VBEsat
ICBO
IEBO
hFE-1
hFE-2
Cob
fT
Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
Base-emitter saturation voltage
IC=-0.5A ;IB=-50mA
Collector cut-off current
VCB=-150V ;IE=0
Emitter cut-off current
VEB=-3V; IC=0
DC current gain
IC=-5mA ; VCE=-5V
DC current gain
IC=-150mA ; VCE=-5V
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
Transition frequency
IC=-100mA ; VCE=10V
MIN TYP. MAX UNIT
-1.0 V
-1.5 V
-1 µA
-1 µA
30
60 320
45 pF
80 MHz
hFE-2 Classifications
RQ
P
60-120 100-200 160-320
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA 1006B · DESCRIPTION ·With TO-220 pa ckage ·Complement to type 2SC2336, 2SC 2336A,2SC2336B APPLICATIONS ·Audio fre quency power amplifier ·High frequency power amplifier PINNING PIN 1 2 3 DESC RIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified out line (TO-220) and symbol Absolute maxi mum ratings(Ta=25 ) SYMBOL PARAMETER 2S A1006 VCBO Collector-base voltage 2SA10 06A 2SA1006B 2SA1006 VCEO Collector-emi tter voltage 2SA1006A 2SA1006B VEBO IC ICM PT Tj Tstg Emitter-base voltage Col lector current Collector current-Peak T otal power dissipation Junction tempera ture Storage temperature Ta=25 TC=25 Op en collector Open base Open emitter CON DITIONS VALUE -180 -200 -250 -180 -200 -250 -5 -1.5 -3.0 1.5 W 25 150 -55~150 V A A V V UNIT SavantIC Semiconductor www.DataSheet4U.com Product Specificat ion Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless othe.
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