SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SA1010
DESCRIPTION ·...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
2SA1010
DESCRIPTION ·With TO-220 package ·Complement to type 2SC2334 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching
regulators ·DC/DC converters ·High frequency power amplifiers
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -7 -7 -15 -3.5 1.5 W UNIT V V V A A A
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-5.0A ,IB=-0.5A,L=1mH IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-5A ; VCE=-5V 40 40 20 MIN -100
2SA1010
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3
TYP.
MAX
UNIT V
-0.6 -1.5 -10 -10 200 200
V V µA µA
...