POwer Transistors. 2SA1021 Datasheet

2SA1021 Transistors. Datasheet pdf. Equivalent


SavantIC 2SA1021
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·High breakdown voltage
·Large current capacity
APPLICATIONS
·For color TV sound output;converters
Inverters applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA1021
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-150
-150
-6
-1.5
-2.5
1.0
20
150
-55~150
UNIT
V
V
V
A
A
W


2SA1021 Datasheet
Recommendation 2SA1021 Datasheet
Part 2SA1021
Description Silicon POwer Transistors
Feature 2SA1021; SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SA1021 Datasheet




SavantIC 2SA1021
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=8
V(BR)CBO Collector-base breakdown voltage
IC=-10µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10µA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA
VBEsat
Base-emitter saturation voltage
IC=-500mA; IB=-50mA
ICBO Collector cut-off current
VCB=-120V; IE=0
IEBO Emitter cut-off current
VEB=-4V; IC=0
hFE DC current gain
IC=-150mA ; VCE=-5V
fT Transition frequency
IC=-50mA ; VCE=-10V
Product Specification
2SA1021
MIN TYP. MAX UNIT
-150
V
-150
V
-6 V
-0.5 V
-1.2 V
-1.0 µA
-1.0 µA
60 320
15 MHz
2



SavantIC 2SA1021
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SA1021
Fig.2 Outline dimensions
3







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