2SA1021 Transistors Datasheet

2SA1021 Datasheet, PDF, Equivalent


Part Number

2SA1021

Description

Silicon POwer Transistors

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SA1021 Datasheet


2SA1021
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·High breakdown voltage
·Large current capacity
APPLICATIONS
·For color TV sound output;converters
Inverters applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA1021
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-150
-150
-6
-1.5
-2.5
1.0
20
150
-55~150
UNIT
V
V
V
A
A
W

2SA1021
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=8
V(BR)CBO Collector-base breakdown voltage
IC=-10µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10µA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA
VBEsat
Base-emitter saturation voltage
IC=-500mA; IB=-50mA
ICBO Collector cut-off current
VCB=-120V; IE=0
IEBO Emitter cut-off current
VEB=-4V; IC=0
hFE DC current gain
IC=-150mA ; VCE=-5V
fT Transition frequency
IC=-50mA ; VCE=-10V
Product Specification
2SA1021
MIN TYP. MAX UNIT
-150
V
-150
V
-6 V
-0.5 V
-1.2 V
-1.0 µA
-1.0 µA
60 320
15 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large current capacity APPLI CATIONS ·For color TV sound output;con verters Inverters applications PINNING PIN 1 2 3 Emitter Collector;connected t o mounting base Base DESCRIPTION Absol ute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-b ase voltage Collector-emitter voltage E mitter-base voltage Collector current C ollector current-Peak Ta=25 PC Collecto r power dissipation TC=25 Tj Tstg Junct ion temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Ope n base Open collector VALUE -150 -150 - 6 -1.5 -2.5 1.0 W UNIT V V V A A Savan tIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Powe r Transistors CHARACTERISTICS Tj=25 unl ess otherwise specified PARAMETER Colle ctor-emitter breakdown voltage Collecto r-base breakdown voltage Emitter-base breakdown voltage Collector-e.
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