2SA1075 TRANSISTOR Datasheet

2SA1075 Datasheet, PDF, Equivalent


Part Number

2SA1075

Description

(2SA1075 / 2SA1076) SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SA1075 Datasheet


2SA1075
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With MT-200 package
·Complement to type 2SC2525,2SC2526
·Fast switching speed
·Excellent safe operating area
APPLICATIONS
·High frequency power amplifiers
·Audio power amplifiers
·Switching regulators
·DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SA1075 2SA1076
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SA1075
2SA1076
Open emitter
VCEO
Collector-emitter voltage
2SA1075
2SA1076
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
VALUE
-120
-160
-120
-160
-7
-12
120
150
-65~150
UNIT
V
V
V
V
V
A
W

2SA1075
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA1075
2SA1076
IC=-1mA ;RBE=<
V(BR)CBO
Collector-base
breakdown voltage
2SA1075
2SA1076
IC=-50µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA; IC=0
VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5A
VBE Base-emitter voltage
IC=-5A;VCE=-5V
2SA1075 VCB=-120V; IE=0
ICBO Collector cut-off current
2SA1076 VCB=-160V; IE=0
2SA1075 VCE=-120V; IB=0
ICEO Collector cut-off current
2SA1076 VCE=-160V; IB=0
IEBO Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-7A ; VCE=-5V
Cob Output capacitance
IE=0 ; VCB=-10V
fT Transition frequency
IC=-1A ; VCE=-10V
Switching times
tr Rise time
ts Storage time
tf Fall time
IC=-7.5A;RL=4C
IB1=-IB2=-0.75A
Product Specification
2SA1075 2SA1076
MIN
-120
-160
-120
-160
-7
TYP.
MAX
-1.8
-1.7
UNIT
V
V
V
V
V
-50 µA
-1 mA
-50 µA
60 200
40
300 pF
60 MHz
0.15 µs
0.50 µs
0.11 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2SA1075 2SA1076 DES CRIPTION ·With MT-200 package ·Comple ment to type 2SC2525,2SC2526 ·Fast swi tching speed ·Excellent safe operating area APPLICATIONS ·High frequency pow er amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converte rs PINNING(see Fig.2) PIN 1 2 3 Base Co llector;connected to mounting base Emit ter Fig.1 simplified outline (MT-200) a nd symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SA10 75 VCBO Collector-base voltage 2SA1076 2SA1075 VCEO Collector-emitter voltage 2SA1076 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector po wer dissipation Junction temperature St orage temperature TC=25 Open collector Open base -160 -7 -12 120 150 -65~150 V V A W Open emitter -160 -120 V V CONDI TIONS VALUE -120 UNIT V SavantIC Semic onductor www.DataSheet4U.com Product S pecification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unles.
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