2SA1077 TRANSISTOR Datasheet

2SA1077 Datasheet, PDF, Equivalent


Part Number

2SA1077

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SA1077 Datasheet


2SA1077
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2527
·High transition frequency
·Excellent safe operating area
APPLICATIONS
·High-frequency power amplifier
·Audio power amplifiers
·Switching regulators
·DC-DC converters
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA1077
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-7
-10
60
150
-55~150
UNIT
V
V
V
A
W

2SA1077
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA1077
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=:
-120
V
V(BR)CBO Collector-base breakdown voltage
IC=-50µA ,IE=0
-120
V
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ,IC=0
-7
V
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
-0.9 -1.8
V
VBE Base-emitter on voltage
ICBO Collector cut-off current
IC=-5A ; VCE=-5V
VCB=-120V; IE=0
-1.25 -1.7
V
-50 µA
ICEO Collector cut-off current
VCE=-120V; IB=0
-1 mA
IEBO Emitter cut-off current
VEB=-7V; IC=0
-50 µA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
60 200
hFE-2
DC current gain
IC=-5A ; VCE=-5V
40
fT Transition frequency
COB Output capacitance
IC=-1A ; VCE=-10V;f=10MHz
IE=0 ; VCB=-10V;f=1MHz
30 60
MHz
300 470
pF
Switching times
tr Rise time
tstg Storage time
tf Fall time
IC=-7.5A; RL=4D
IB1=-IB2=-0.75A;
0.15 µs
0.5 µs
0.11 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2SA1077 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2527 ·High transition frequenc y ·Excellent safe operating area APPLI CATIONS ·High-frequency power amplifie r ·Audio power amplifiers ·Switching regulators ·DC-DC converters PINNING P IN 1 2 3 DESCRIPTION Emitter Collector; connected to mounting base Base Fig.1 s implified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitt er voltage Emitter-base voltage Collect or current Collector power dissipation Junction temperature Storage temperatur e TC=25 CONDITIONS Open emitter Open ba se Open collector VALUE -120 -120 -7 -1 0 60 150 -55~150 UNIT V V V A W Savant IC Semiconductor www.DataSheet4U.com P roduct Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unle ss otherwise specified PARAMETER Collector-emitter breakdown voltage Co.
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