2SA1079 TRANSISTOR Datasheet

2SA1079 Datasheet, PDF, Equivalent


Part Number

2SA1079

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SA1079 Datasheet


2SA1079
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·High transition frequency
·Excellent safe operating area
APPLICATIONS
·High-frequency power amplifier
·Audio power amplifiers and drivers
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA1079
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-160
-160
-5
-2
25
150
-65~150
UNIT
V
V
V
A
W

2SA1079
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA1079
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=8
-160
V
V(BR)CBO Collector-base breakdown voltage
IC=-1µA ,IE=0
-160
V
V(BR)EBO Emitter-base breakdown voltage
IE=-1µA ,IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-0.7A; IB=-70mA
-0.45 -1.0
V
VBE Base-emitter on voltage
ICBO Collector cut-off current
IC=-0.7A ; VCE=-5V
VCB=-160V; IE=0
-0.8 -1.7
V
-1 µA
ICEO Collector cut-off current
VCE=-160V; IB=0
-100 µA
IEBO Emitter cut-off current
VEB=-5V; IC=0
-1 µA
hFE-1
DC current gain
IC=-0.3A ; VCE=-5V
100 350
hFE-2
DC current gain
IC=-0.7A ; VCE=-5V
50
fT Transition frequency
COB Output capacitance
IC=-0.5A ; VCE=-10V;f=10MHz 120 MHz
IE=0 ; VCB=-20V;f=1MHz
100 pF
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2SA1079 DESCRIPTION ·With TO-220 package ·High transitio n frequency ·Excellent safe operating area APPLICATIONS ·High-frequency powe r amplifier ·Audio power amplifiers an d drivers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mountin g base Base Fig.1 simplified outline (T O-220) and symbol Absolute maximum rat ings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC P C Tj Tstg PARAMETER Collector-base volt age Collector-emitter voltage Emitter-b ase voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS O pen emitter Open base Open collector VA LUE -160 -160 -5 -2 25 150 -65~150 UNIT V V V A W SavantIC Semiconductor www. DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTE RISTICS Tj=25 unless otherwise specifie d PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown vol.
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