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2SA1096

SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESC...


SavantIC

2SA1096

File Download Download 2SA1096 Datasheet


Description
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SA1096 VCEO Collector- emitter voltage 2SA1096A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Open collector Open base -60 -5 -2 -3 1.2* PD Total power dissipation TC=25 5* Tj Tstg Junction temperature Storage temperature 2 1 CONDITIONS Open emitter VALUE UNIT V -70 -50 V V A A W 150 -55 +150 Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SA1096 IC=-2mA ; IB=0 2SA1096A IC=-1mA ;IE=0 IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCE=-10V; IB=0 VCB=-20V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IE=0 ; VCB=-20V,f=1MHz CONDITIONS 2SA1096 2SA1096A SYMBOL MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -60 -70 -1.0 -1.5 -1 -100 -10 80 55 150 220 pF MHz V V V µA µA µA V(BR)CBO VCEsat VBEsat ICEO ICBO IEBO hFE COB fT Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off...




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