SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-66...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION
2SA1250
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -7 -8 30 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SA1250
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
Collector-emitter breakdown voltage
IC=-10mA ;IB=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=200V; IE=0 VEB=-7V; IC=0 IC=-2A ; VCE=-1V IC=-5A ; VCE=-1V
-200
V
Emitter-base breakdown voltage
-7
V
Collector-emitter saturation voltage
-1.5
V
Base-emitter saturation voltage
-2.0
V
Collector cut-off current
-10
µA
Emitter cut-off current
-10
µA
DC current gain
40
200
DC current gain
20
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
PACKAGE ...