2SA1333

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1333 DESCRIPTION ·With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING (see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -5 -15 -5 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-25mA ; IB=0 IE=-1mA ; IC=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-200V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-1A ; VCE=-12V 50 MIN -200 -5 2SA1333 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V -2.0 -2.5 -100 -100 V V µA µA 30 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLIN...