2SA1640

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1640 DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For switching regulator ,driver and power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -5 -7 -10 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1640 SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Collector-emitter breakdown voltage IC=-10mA ; IB=0 IC=-1mA ; IE=0 IE=-1mA ; IC=0 IC=-3A ;IB=-0.1A IC=-3A ;IB=-0.1A VCB=-30V; IE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-2V IC=-0.5A ; VCE=-10V -30 V Collector-base breakdown voltage -30 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -0.4 V Base-emitter saturation voltage -1.0 V Collector cut-off current -10 µA Emitter cut-off current -10 µA DC current gain 100 300 Transition frequency 20 MHz 2 Sava...