POWER TRANSISTOR. 2SA1880 Datasheet

2SA1880 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SA1880
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
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2SA1880
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With ITO-220 package
·Switching power transistor
·Low collector saturation voltage
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Product Specification
2SA1880
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction case
VALUE
-80
-80
-7
-10
-20
-1.5
-2
25
150
-55~150
UNIT
V
V
V
A
A
A
A
W
MAX
5.0
UNIT
/W



2SA1880
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA1880
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO
Collector cut-off current
ICEO
At rated volatge
IEBO Emitter cut-off current
At rated volatge
hFE DC current gain
IC=-5A ; VCE=-2V
fT Transition frequency
IC=-1A ; VCE=-10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=-5A;IB1=-IB2=-0.5A ,
RL=5A;VBB2=-4V
MIN TYP. MAX UNIT
-80 V
-0.3 V
-1.2 V
-0.1 mA
-0.1 mA
70
50 MHz
0.3 µs
1.5 µs
0.2 µs
2





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