2SB407

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB407 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -10 -7 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB407 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-6A; IB=-0.6A IC=-6A; IB=-0.6A VCB=-30V; IE=0 VEB=-10V; IC=0 IC=-1A ; VCE=-1.5V -30 V Collector-base breakdown voltage -30 V Emitter-base breakdown voltage -10 V Collector-emitter saturation voltage -1.0 V Base-emitter saturation voltage -1.5 V Collector cut-off current -10 µA Emitter cut-off current -10 µA DC current gain 80 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OU...