MRF19125S MOSFETs Datasheet

MRF19125S Datasheet, PDF, Equivalent


Part Number

MRF19125S

Description

RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

Manufacture

Motorola

Total Page 12 Pages
Datasheet
Download MRF19125S Datasheet


MRF19125S
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19125/D
The RF Sub–Micron MOSFET Line
RF Powerwww.DataSheet4U.com Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2–Carrier N–CDMA Performance for VDD = 26 Volts,
IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 24 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 22%
ACPR — –51 dB
IM3 — –37.0 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch
Reel.
MRF19125
MRF19125S
MRF19125SR3
1990 MHz, 125 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465B–03, STYLE 1
(NI–880)
(MRF19125)
CASE 465C–02, STYLE 1
(NI–880S)
(MRF19125S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
330
1.89
–65 to +200
200
Class
2 (Minimum)
M3 (Minimum)
Max
0.53
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF19125 MRF19125S MRF19125SR3
1

MRF19125S
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
www.DataSheet4U.com
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
V(BR)DSS
65
Vdc
GateSource Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
10 µAdc
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs 9 S
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2
4 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 1300 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.185
0.21
Vdc
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss 5.4 pF
FUNCTIONAL TESTS (In Motorola Test Fixture) 2Carrier NCDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB
@ 0.01% Probability on CCDF.
CommonSource Amplifier Power Gain
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Gps 12 13.5 dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η 19 22 %
Intermodulation Distortion
IMD — –37 35 dBc
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 2.5 MHz and f2 +2.5 MHz)
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 885 MHz and f2 +885 MHz)
ACPR
51 47 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL — –13 9 dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 125 W CW, IDQ = 1300 mA, f = 1930 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Test)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF19125 MRF19125S MRF19125SR3
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub–Micron MOSFET Line www.DataShe et4U.com RF Power Field Effect Transis tors N–Channel Enhancement–Mode Lat eral MOSFETs Designed for PCN and PCS base station applications with frequenc ies from 1.9 to 2.0 GHz. Suitable for T DMA, CDMA and multicarrier amplifier ap plications. • Typical 2–Carrier N CDMA Performance for VDD = 26 Volts, I DQ = 1300 mA, f1 = 1958.75 MHz, f2 = 19 61.25 MHz IS–95 CDMA (Pilot, Sync, Pa ging, Traffic Codes 8 Through 13) 1.228 8 MHz Channel Bandwidth Carrier. Adjace nt Channels Measured over a 30 kHz Band width at f1 –885 kHz and f2 +885 kHz. Distortion Products Measured over 1.22 88 MHz Bandwidth at f1 –2.5 MHz and f 2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 2 4 Watts Avg. Power Gain — 13.6 dB Eff iciency — 22% ACPR — –51 dB IM3 –37.0 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Pr.
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