MRF19120S TRANSISTORS Datasheet

MRF19120S Datasheet, PDF, Equivalent


Part Number

MRF19120S

Description

RF POWER FIELD EFFECT TRANSISTORS

Manufacture

Motorola

Total Page 12 Pages
Datasheet
Download MRF19120S Datasheet


MRF19120S
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19120/D
The RF Sub–Micron MOSFET Line
RF Powerwww.DataSheet4U.com Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
MRF19120
MRF19120S
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
CDMA Performance @ 1990 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — –47 dBc @ 30 kHz BW
1.25 MHz — –55 dBc @ 12.5 kHz BW
2.25 MHz — –55 dBc @ 1 MHz BW
Output Power — 15 Watts (Avg.)
Power Gain — 11.7 dB
Efficiency — 16%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency, High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW)
Output Power
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
1990 MHz, 120 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 375D–04, STYLE 1
NI–1230
MRF19120
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 375E–03, STYLE 1
NI–1230S
MRF19120S
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
–0.5, +15
389
2.22
–65 to +150
200
Class
1 (Minimum)
M3 (Minimum)
Max
0.45
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF19120 MRF19120S
1

MRF19120S
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
www.DataSheet4U.com
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
ON CHARACTERISTICS (1)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Gate Threshold Voltage
(VDS = 10 V, ID = 200 µA)
Gate Quiescent Voltage
(VDS = 26 V, ID = 500 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 2 A)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
500 mA,
MRF19120
MRF19120S
V(BR)DSS
IGSS
IDSS
gfs
VGS(th)
VGS(Q)
VDS(on)
Crss
Gps
Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
500 mA,
η
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
500 mA,
MRF19120
MRF19120S
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
500 mA,
IRL
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
500 mA,
Gps
Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
500 mA,
η
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
500 mA,
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
500 mA,
IRL
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, CW, IDQ = 2 500 mA, f1 = 1990.0 MHz)
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2
f1 = 1990.0 MHz)
500 mA,
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
P1dB
Gps
Min
65
2.5
3
10.7
10.5
30
Typ
4.8
3
3.9
0.38
2.8
11.7
11.7
34
–31
–31
–12
11.7
34
–31
–14
120
11
Max Unit
— Vdc
1 µAdc
10 µAdc
—S
3.8 Vdc
5 Vdc
0.5 Vdc
— pF
dB
—%
dB
–28
–27
–9 dB
— dB
—%
— dB
— dB
— Watts
— dB
MRF19120 MRF19120S
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19120/D The RF Sub–Micron MOSFET Line www.DataShe et4U.com RF Power Field Effect Transis tors N–Channel Enhancement–Mode Lat eral MOSFETs MRF19120 MRF19120S 1990 M Hz, 120 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for CDMA base s tation applications with frequencies fr om 1930 to 1990 MHz. Suitable for FM, T DMA, CDMA and multicarrier amplifier ap plications. To be used in Class AB for PCN–PCS/cellular radio and WLL applic ations. • CDMA Performance @ 1990 MHz , 26 Volts IS–97 CDMA Pilot, Sync, Pa ging, Traffic Codes 8 Thru 13 885 kHz –47 dBc @ 30 kHz BW 1.25 MHz — 55 dBc @ 12.5 kHz BW 2.25 MHz — – 55 dBc @ 1 MHz BW Output Power — 15 W atts (Avg.) Power Gain — 11.7 dB Effi ciency — 16% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency, High Linearity Integrated ESD Protection • Design ed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 1.
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