16N50C3

SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 Extreme dv/dt rated 2 Ultra low effective capacitances Improved transconductance P-TO220-3-31 3 12 PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-1 123 Type SPP16N50C3 SPI16N50C3 SPA16N50C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4583 Q67040-S4582 SP000216351 Marking 16N50C3 16N50C3 16N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=8, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) Symbol ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 16 161) 10 101) 48 48 460 460 0.64 0.64 16 16 ±20 ±20 ±30 ±30 160 34 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 3.2 page 1 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 16 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistanc...