Power Transistor. 16N50C3 Datasheet

16N50C3 Transistor. Datasheet pdf. Equivalent

16N50C3 Datasheet
Recommendation 16N50C3 Datasheet
Part 16N50C3
Description Power Transistor
Feature 16N50C3; SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high volta.
Manufacture Infineon Technologies
Datasheet
Download 16N50C3 Datasheet




Infineon Technologies 16N50C3
SPP16N50C3
SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
560
0.28
16
V
A
Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
Extreme dv/dt rated
2
Ultra low effective capacitances
Improved transconductance
P-TO220-3-31
3
12
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type
SPP16N50C3
SPI16N50C3
SPA16N50C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4583
Q67040-S4582
SP000216351
Marking
16N50C3
16N50C3
16N50C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=8, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=16A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
16 161)
10 101)
48 48
460 460
0.64 0.64
16 16
±20 ±20
±30 ±30
160 34
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.2
page 1
2009-12-22



Infineon Technologies 16N50C3
SPP16N50C3
SPI16N50C3, SPA16N50C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 400 V, ID = 16 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s3)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA FP
Tsold
Values
min. typ. max.
- - 0.78
- - 3.7
- - 62
- - 80
- - 260
Unit
K/W
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=16A
500
-
-
600
-
-
Gate threshold voltage
VGS(th) ID=675µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS
VDS=500V, VGS=0V,
Tj=25°C
- 0.1 1
Tj=150°C
- - 100
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
VGS=20V, VDS=0V
VGS=10V, ID=10A
Tj=25°C
Tj=150°C
- - 100
- 0.25 0.28
- 0.68 -
Gate input resistance
RG
f=1MHz, open drain
-
1.5
-
Unit
V
µA
nA
Rev. 3.2
page 2
2009-12-22



Infineon Technologies 16N50C3
SPP16N50C3
SPI16N50C3, SPA16N50C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Characteristics
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,4) Co(er)
energy related
Effective output capacitance,5) Co(tr)
time related
VDS2*ID*RDS(on)max,
ID=10A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 400V
-
-
-
-
-
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=380V, VGS=0/10V,
ID=16A, RG=4.3
-
-
-
-
Values
typ. max.
14 -
1600
800
30
64
-
-
-
-
124 -
10 -
8-
50 -
8-
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Qgs VDD=380V, ID=16A
Gate to drain charge
Gate charge total
Qgd
Qg
VDD=380V, ID=16A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=380V, ID=16A
- 7 - nC
- 36 -
- 66 -
- 5 -V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
3Soldering temperature for TO-263: 220°C, reflow
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 3.2
page 3
2009-12-22







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