16N50C3 SPP16N50C3 Datasheet

16N50C3 Datasheet, PDF, Equivalent


Part Number

16N50C3

Description

SPP16N50C3

Manufacture

Infineon Technologies

Total Page 14 Pages
Datasheet
Download 16N50C3 Datasheet


16N50C3
SPP16N50C3
SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
560
0.28
16
V
A
Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
Extreme dv/dt rated
2
Ultra low effective capacitances
Improved transconductance
P-TO220-3-31
3
12
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type
SPP16N50C3
SPI16N50C3
SPA16N50C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4583
Q67040-S4582
SP000216351
Marking
16N50C3
16N50C3
16N50C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=8, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=16A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
16 161)
10 101)
48 48
460 460
0.64 0.64
16 16
±20 ±20
±30 ±30
160 34
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.2
page 1
2009-12-22

16N50C3
SPP16N50C3
SPI16N50C3, SPA16N50C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 400 V, ID = 16 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s3)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA FP
Tsold
Values
min. typ. max.
- - 0.78
- - 3.7
- - 62
- - 80
- - 260
Unit
K/W
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=16A
500
-
-
600
-
-
Gate threshold voltage
VGS(th) ID=675µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS
VDS=500V, VGS=0V,
Tj=25°C
- 0.1 1
Tj=150°C
- - 100
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
VGS=20V, VDS=0V
VGS=10V, ID=10A
Tj=25°C
Tj=150°C
- - 100
- 0.25 0.28
- 0.68 -
Gate input resistance
RG
f=1MHz, open drain
-
1.5
-
Unit
V
µA
nA
Rev. 3.2
page 2
2009-12-22


Features SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A • P eriodic avalanche rated PG-TO220FP PG- TO262 PG-TO220 • Extreme dv/dt rate d 2 • Ultra low effective capacitan ces • Improved transconductance P-TO 220-3-31 3 12 • PG-TO-220-3-31;-3-1 11: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-1 123 Type SPP16N 50C3 SPI16N50C3 SPA16N50C3 Package PG- TO220 PG-TO262 PG-TO220FP Ordering Cod e Q67040-S4583 Q67040-S4582 SP000216351 Marking 16N50C3 16N50C3 16N50C3 Maxi mum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Ava lanche energy, single pulse ID=8, VDD=5 0V Avalanche energy, repetitive tAR lim ited by Tjmax2) ID=16A, VDD=50V Avalanc he current, repetitive tAR limited by T jmax Gate source voltage Gate source vo ltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Re.
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