RECOVERY DIODES. 25F80 Datasheet

25F80 DIODES. Datasheet pdf. Equivalent

25F80 Datasheet
Recommendation 25F80 Datasheet
Part 25F80
Description STANDARD RECOVERY DIODES
Feature 25F80; www.DataSheet4U.com Bulletin I2018 rev. B 09/98 25F(R) SERIES STANDARD RECOVERY DIODES Stud Versio.
Manufacture International Rectifier
Datasheet
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International Rectifier 25F80
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STANDARD RECOVERY DIODES
Features
High surge current capability
Avalanche types available
Stud cathode and stud anode version
Wide current range
Types up to 1200V VRRM
TypicalApplications
Battery charges
Converters
Power supplies
Machine tool controls
Bulletin I2018 rev. B 09/98
25F(R) SERIES
Stud Version
25 A
Major Ratings and Characteristics
Parameters
IF(AV)
IF(RMS)
@ TC
IFSM @ 50Hz
@ 60Hz
25F(R)
25
120
40
356
373
I2t @ 50Hz
636
@ 60Hz
580
VRRM
TJ
range
range
100 to 1200
- 65 to 175
Units
A
°C
A
A
A
A2s
A2s
V
°C
case style
DO-203AA (DO-4)
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International Rectifier 25F80
www.DataSheet4U.com
25F(R) Series
Bulletin I2018 rev. B 09/98
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
25F(R)
10
20
40
60
80
100
120
VRRM, maximum
repetitive peak
reverse voltage
V
100
200
400
600
800
1000
1200
VRSM, maximum non-
repetitive peak
reverse voltage
V
150
275
500
725
950
1200
1400
(1) Avalanche version only available from VRRM 400V to 1200V.
VR(BR), minimum
avalanche
voltage
V (1)
--
--
500
750
950
1150
1350
IRRM max.
@ TJ = 175°C
mA
12
Forward Conduction
Parameter
25F(R)
Units Conditions
IF(AV) Max. average forward current
@ Case temperature
IF(RMS) Max. RMS forward current
PR Maximum non-repetitive
peak reverse power
25 A 180° conduction, half sine wave
120 °C
40 A
10 K/W 10µs square pulse, TJ = TJ max.
see note (2)
IFSM Max. peak, one-cycle forward,
non-repetitive surge current
356
373
300
314
t = 10ms No voltage
t = 8.3ms reapplied
A
t = 10ms 100% VRRM
t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing
636 t = 10ms No voltage Initial TJ = TJ max.
580 t = 8.3ms reapplied
A2s
450 t = 10ms 100% VRRM
410 t = 8.3ms reapplied
I2t Maximum I2t for fusing
V Low level value of threshold
F(TO)1
voltage
V High level value of threshold
F(TO)2
voltage
6360
0.80
0.90
A2s t = 0.1 to 10ms, no voltage reapplied
(16.7%
x
π
x
I
F(AV)
<
I
<
π
x
I ),
F(AV)
T
J
=
T
J
max.
V
(I
>
π
x
I ),
F(AV)
T
J
=
T
J
max.
rf1 Low level value of forward
slope resistance
rf2 High level value of forward
slope resistance
6.80
5.70
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
m
(I > π x IF(AV)), TJ = TJ max.
VFM Max. forward voltage drop
1.30
V Ipk= 78A, TJ = 25°C, tp = 400µs rectangular wave
(2) Available only for Avalanche version, all other parameters the same as 25F.
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International Rectifier 25F80
www.DataSheet4U.com
25F(R) Series
Bulletin I2018 rev. B 09/98
Thermal and Mechanical Specifications
Parameter
TJ
Tstg
RthJC
R
thCS
T
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case
to heatsink
Mounting torque, ± 10%
wt Approximate weight
Case style
25F(R)
Units Conditions
-65 to 175
-65 to 200
°C
1.5 DC operation
K/W Mounting surface, smooth, flat and
0.5 greased
1.2 Nm Lubricated threads
(1.5)
(Not lubricated threads)
7 (0.25)
g (oz)
DO-203AA (DO-4)
See Outline Table
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
60°
30°
0.28
0.39
0.50
0.73
1.20
0.24
0.41
0.54
0.75
1.21
K/W
TJ = TJ max.
Ordering Information Table
Device Code
A 25 F
R 120 M
1 2 3 45 6
1 - A = Avalanche diode
None = Standard diode
2 - Current rating: Code = IF(AV)
3 - F = Standard device
4 - None = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5 - Voltage code: Code x 10 = VRRM (See Voltage Ratings table)
6 - None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M = Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)
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