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RJK0329DPB
Silicon N Channel Power MOS FET Power Switching
REJ03G1638-0400 Rev.4.00 Apr 10, 2008
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 mΩ typ. (at VGS = 10 V) Pb-free
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
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