RJK0346DPA

www.DataSheet4U.com RJK0346DPA Silicon N Channel Power MOS FET Power Switching REJ03G1642-0200 Rev.2.00 Apr 10, 2008 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 mΩ typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 Note1 Ratings 30 ±20 65 260 65 35 122.5 65 1.92 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C EAR Note 2 Pch Note3 θch-C Tch Tstg REJ03G1642-0200 Rev.2.00 Apr 10, 2008 Page 1 of 6 RJK0346DPA Electrical Characteristics (Ta = 25°C) www.DataSheet4U.com Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise ti...