RJK0348DPA

www.DataSheet4U.com RJK0348DPA Silicon N Channel Power MOS FET Power Switching REJ03G1643-0300 Rev.3.00 May 13, 2008 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 mΩ typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Note3 Pch θch-C Tch Tstg Ratings 30 ±20 50 200 50 31 96.1 55 2.27 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C REJ03G1643-0300 Rev.3.00 May 13, 2008 Page 1 of 6 RJK0348DPA Electrical Characteristics (Ta = 25°C) www.DataSheet4U.com Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Tu...