RJK0353DSP

www.DataSheet4U.com RJK0353DSP Silicon N Channel Power MOS FET Power Switching REJ03G1648-0401 Rev.4.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 5 6 7 8 D D D D 8 12 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR Note1 Ratings 30 ±20 18 144 18 16 25.6 2.0 62.5 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s REJ03G1648-0401 Rev.4.01 Apr 24, 2008 Page 1 of 6 RJK0353DSP Electrical Characteristics www.DataSheet4U.com (Ta = 25°C) Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 4.5 5.9 41 2180 420 135 2.0 15 5.4 3.0 8.5 4.0 46.4 6.0 0.8 20 Max — ± 0.1 1 2.5 5.9 8.3 — — — — — — — — — — — — 1.04 — Unit V µA µA V mΩ mΩ S p...