Silicon N Channel Power MOS FET Power Switching
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RJK0355DSP
Silicon N Channel Power MOS FET Power Switching
REJ03G1650-0301 Rev.3.01 Apr 24, 2008
F...
Description
www.DataSheet4U.com
RJK0355DSP
Silicon N Channel Power MOS FET Power Switching
REJ03G1650-0301 Rev.3.01 Apr 24, 2008
Features
Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.5 mΩ typ. (at VGS = 10 V) Pb-free
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)
5 76 34
5 6 7 8 D D D D
8
12
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR
Note1
Ratings 30 ±20 12 96 12 9 8.1 1.8 69.4 150 –55 to +150
Unit V V A A A A mJ W °C/W °C °C
IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
REJ03G1650-0301 Rev.3.01 Apr 24, 2008 Page 1 of 6
RJK0355DSP
Electrical Characteristics
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(Ta = 25°C)
Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 8.5 12.0 35 860 165 53 4.2 6.0 2.3 1.4 6.9 3.5 40.2 4.8 0.82 20 Max — ± 0.1 1 2.5 11.1 16.8 — — — — — — — — — — — — 1.07 — Unit V µA µA V mΩ mΩ S p...
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