RJK0358DPA

www.DataSheet4U.com RJK0358DPA Silicon N Channel Power MOS FET Power Switching REJ03G1651-0400 Rev.4.00 Apr 10, 2008 Features High speed switching Capable of 5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.6 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-c Note3 Tch Tstg Ratings 30 ±20 38 152 38 19 36.1 45 2.78 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C REJ03G1651-0400 Rev.4.00 Apr 10, 2008 Page 1 of 6 RJK0358DPA Electrical Characteristics www.DataSheet4U.com (Ta = 25°C) Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.0 — — — — — — — — — — — — — — — Typ — — — — 2.6 3.8 50 4300 500 280 33 13 8 11 5.8 68 12 0.84 30 Max — ± 0.1 1 2.5 3.4 5.4 — — — — — — — — — — — 1.10 — Unit V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±...