RJK0383DPA

www.DataSheet4U.com RJK0383DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1723-0101 Preliminary Rev.1.01 Jul 10, 2008 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline WPAK 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 1 G1 8 G2 9 S2 S2 S2 6 7 5 4 3 2 1 (Bottom View) MOS1 MOS2 + SBD Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 Tch Tstg MOS1 30 ±20 15 60 15 11 12.1 10 150 –55 to +150 MOS2 30 ±20 45 180 45 20 40 30 150 –55 to +150 Unit V V A A A A mJ W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C REJ03G1723-0101 Rev.1.01 Jul 10, 2008 Page 1 of 4 RJK0383DPA Electrical Characteristics www.DataSheet4U.com MOS1 (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage B...