POWER TRANSISTOR. 2SB509 Datasheet

2SB509 TRANSISTOR. Datasheet pdf. Equivalent


SavantIC 2SB509
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2SB509
DESCRIPTION
·With TO-66 package
·Complement to type 2SD315
APPLICATIONS
·For use in audio frequency power
amplifier application
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-60
-60
-5
-4
-10
35
150
-40~150
UNIT
V
V
V
A
A
W


2SB509 Datasheet
Recommendation 2SB509 Datasheet
Part 2SB509
Description SILICON POWER TRANSISTOR
Feature 2SB509; SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SB509 Datasheet




SavantIC 2SB509
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
VBE Base-emitter on voltage
IC=-1A ; VCE=-2V
ICBO Collector cut-off current
VCB=-20V; IE=0
IEBO Emitter cut-off current
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-2V
hFE-2
DC current gain
IC=-0.1A ; VCE=-2V
fT Transition frequency
IC=-0.5A ; VCE=-5V
Product Specification
2SB509
MIN TYP. MAX UNIT
-60 V
-1.0 V
-1.5 V
-0.1 mA
-1.0 mA
40 320
40
8 MHz
hFE-1 Classifications
CDE
F
40-80
60-120 100-200 160-320
2



SavantIC 2SB509
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB509
Fig.2 outline dimensions
3







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