2SB539

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB539 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -130 -130 -5 -10 10 100 150 -65~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IE=-1mA ;IC=0 IC=-6A; IB=-0.6A IC=-6A ; VCE=-5V VCB=-130V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-5V IC=-1A ; VCE=-5V 40 8 MIN -130 -5 2SB539 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT TYP. MAX UNIT V V -3.0 -2.5 -0.1 -0.1 200 V V mA mA MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power ...