SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB563
DESCRIPTION ·W...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
2SB563
DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -80 -80 -5 -3 25 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SB563
SYMBOL
TYP.
MAX
UNIT
V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE
Collector-base breakdown voltage
IC=-1mA; IE=0 IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-3A; IB=-0.3A IC=-3A; IB=-0.3A VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V
-80
V
Collector-emitter breakdown voltage
-80
V
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-1.0
V
Base-emitter saturation voltage
-1.5
V
Collector cut-off current
-0.1
mA
Emitter cut-off current
-0.1
mA
DC current gain
30
200
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
PACKAGE OUTLINE
2SB...