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MSAFZ33N20A Dataheets PDF



Part Number MSAFZ33N20A
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet MSAFZ33N20A DatasheetMSAFZ33N20A Datasheet (PDF)

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAEZ33N20A MSAFZ33N20A 200 Volts 33 Amps 70 mΩ N-CHANNEL ENHANCEMENT MODE POWER MOSFET www.DataSheet4U.com Features • • • • • • • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity ava.

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2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAEZ33N20A MSAFZ33N20A 200 Volts 33 Amps 70 mΩ N-CHANNEL ENHANCEMENT MODE POWER MOSFET www.DataSheet4U.com Features • • • • • • • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 33 20 132 33 16 790 TBD 300 -55 to +150 -55 to +150 33 132 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts °C °C Amps Amps °C/W Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100°C Tj= 25°C Tj= Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Mechanical Outline DRAIN GATE SOURCE Datasheet# MSC0300A MSAEZ33N20A MSAFZ33N20A www.DataSheet4U.com Electrical Parameters @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) SYMBOL BVDSS ∆BVDSS/∆TJ VGS(th) IGSS IDSS RDS(on) CONDITIONS VGS = 0 V, I D = 250 µA MIN 200 TYP. TBD MAX UNIT V V/°C Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Reverse Recovery Time (Body Diode) Reverse Recovery Charge gfs Ciss Coss Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD trr Qrr VDS = VGS, ID = 1 mA VGS = ± 20V DC, VDS = 0 T J = 25 °C T J = 125 °C VDS =0.8 •BVDSS TJ = 25 °C VGS = 0 V T J = 125 °C VGS= 10V, I D= 21A T J = 25 °C I D= 33A T J = 25 °C I D= 21A T J = 125 °C VDS ≥ 15 V; I D = 21 A VGS = 0 V, V DS = 25 V, f = 1 MHz 2.0 3.0 15 0.06 TBD 0.11 23 2600 500 230 40 110 450 160 120 10 70 1.3 4.0 ±100 ±200 25 250 0.07 V nA µA Ω S 3900 750 350 60 170 680 240 pF VGS = 10 V, V DS = 30 V, ID = 3 A, R G = 50 Ω ns VGS = 10 V, V DS = 160V, I D = 50A nC IF = IS, VGS = 0 V IF = 10 A, -di/dt.


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