Document
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAEZ33N20A MSAFZ33N20A
200 Volts 33 Amps 70 mΩ
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
www.DataSheet4U.com
Features
• • • • •
• •
Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC
MAX. 200 200 +/-20 +/-30 33 20 132 33 16 790 TBD 300 -55 to +150 -55 to +150 33 132 0.4
UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts °C °C Amps Amps °C/W
Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current
100°C
Tj= 25°C Tj=
Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode
@ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C
Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case
Mechanical Outline
DRAIN
GATE
SOURCE
Datasheet# MSC0300A
MSAEZ33N20A MSAFZ33N20A
www.DataSheet4U.com
Electrical Parameters @ 25° C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1)
SYMBOL
BVDSS ∆BVDSS/∆TJ VGS(th) IGSS IDSS RDS(on)
CONDITIONS
VGS = 0 V, I D = 250 µA
MIN
200
TYP.
TBD
MAX
UNIT
V V/°C
Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Reverse Recovery Time (Body Diode) Reverse Recovery Charge
gfs Ciss Coss Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD trr Qrr
VDS = VGS, ID = 1 mA VGS = ± 20V DC, VDS = 0 T J = 25 °C T J = 125 °C VDS =0.8 •BVDSS TJ = 25 °C VGS = 0 V T J = 125 °C VGS= 10V, I D= 21A T J = 25 °C I D= 33A T J = 25 °C I D= 21A T J = 125 °C VDS ≥ 15 V; I D = 21 A VGS = 0 V, V DS = 25 V, f = 1 MHz
2.0
3.0
15
0.06 TBD 0.11 23 2600 500 230 40 110 450 160 120 10 70 1.3
4.0 ±100 ±200 25 250 0.07
V nA µA Ω
S 3900 750 350 60 170 680 240 pF
VGS = 10 V, V DS = 30 V, ID = 3 A, R G = 50 Ω
ns
VGS = 10 V, V DS = 160V, I D = 50A
nC
IF = IS, VGS = 0 V IF = 10 A, -di/dt.