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RM009
Power Amplifier Module for Dual-band GSM900 DCS1800
The RM009 is a dual-band Power Amplifier Module (PAM) designed in a compact Distinguishing Features form factor for Class 4 GSM900 and Class 1 DCS1800 cellular handsets. • High efficiency
GSM 54% DCS 45% Input/output matching 50 Ω internal Small outline 9.1 mm x 11.6 mm Low profile 1.50 mm ±10% Low APC current 60 µA
The module consists a GSM900 PA block and a DCS1800 PA block, matching circuitry for 50 Ω input and output impedances, and bias control circuitry. Two separate Heterojunction Bipolar Transistor (HBT) PA blocks are fabricated on a single Gallium Arsenide (GaAs) die. One PA block operates in the GSM900 band and the other supports the DCS1800 band. The PAM is optimized for three-cell operation with both PAs sharing common power supply pins to distribute current. A custom CMOS integrated circuit contains a current amplifier that minimizes the required power control current (IAPC) to 60 µA, typical.
• • • •
RF input and output ports are internally matched to 50 Ω to reduce the number of Applications external components for a dual-band design. Switching circuitry receives the band select signal on the band select pin (BS) to switch between GSM (logic 0) • Class 4 GSM900 and Class 1 and DCS (logic 1). Analog Power Control (APC) controls the output power of DCS1800 dual-band cellular handsets each PA selected by the band select signal. The extremely low leakage current (2 µA, typical) of the RM009 dual-band module maximizes handset standby time. The functional block diagram shows the relationship of the dual PAs and the CMOS device in the RM009.
Functional Block Diagram
DCS IN
Match
Match
DCS OUT
Power Control Band Select
CMOS Bias Controller
HBT
GSM IN
Match
Match
GSM OUT
Data Sheet Skyworks Solutions, Inc. Proprietary © 1999–2002, Skyworks Solutions, Inc., All Rights Reserved.
101258B July 26, 2002
Electrical Specifications
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
www.DataSheet4U.com
Electrical Specifications
Table 1 provides the absolute maximum ratings of the RM009, Table 2 shows the recommended operating conditions and Table 3 shows the electrical characteristics.
Table 1. Absolute Maximum Ratings Parameter
Supply Voltage (VCC) Storage Temperature
Minimum
— –55
Maximum
7 +125
Unit
V °C
Table 2. Recommended Operating Conditions Parameter
Supply Voltage (VCC) Temperature
Minimum
2.7 –30
Typical
3.2 —
Maximum
4.5 +85
Unit
V °C
Table 3. RM009 Electrical Specifications (1 of 2) Parameter Symbol Test Condition Minimum Typical Maximum Units
GSM Mode (f = 880 MHz to 915 MHz and PIN = 8 dBm to 12 dBm)
Frequency Range GSM900 Input Power GSM900 Leakage Current f1 PINGSM ILEAKAGE — — VCC = 4.5 V VAPC = 0 V VBS = 0 V PINGSM = 10 dBm POUTGSM = 34.5 dBm PINGSM = 10 dBm PINGSM = 10 dBm VCC = 2.7 V TCASE = –20 °C to +85 °C 880 8 — — 10 5 915 12 — MHz dBm µA
Efficiency GSM900 GSM 2nd and 3rd Harmonic Distortion Output Power GSM900
ηGSM H2GSM POUTGSM POUTGSM
46 –39.5 34.5 32
54 –45 35 —
— — — —
% dBc dBm dBm
Input VSWR Isolation GSM900 Cross Isolation Noise Floor GSM900
VSWR(IN) All — — — PINGSM = 10 dBm APC= 0.2 V POUTGSM = 34.5 dBm PINGSM = 10 dBm, BW = 100 kHz, fo ±20 MHz offset —
— — — —
1.5:1 –40 –30 —
2:1 –30 –25 –84
— dBm dBm dBm
Bandselect Thresholds: GSM VBSLMAX DCS VBSHMIN — 2.0 0.5 V V
2
Skyworks Solutions, Inc. Proprietary
101258B July 26, 2002
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Table 3. RM009 Electrical Specifications (2 of 2)
www.DataSheet4U.com
Electrical Specifications
Parameter
Symbol
— —
Test Condition
POUTGSM = 34.5 dBm POUTGSM = 34.5 dBm
Minimum Typical Maximum Units
— — 2.0 1.8 — — — µsec
Full Power Control Voltage Rise Time and Fall Time
DCS Mode (f = 1710 MHz to 1785 MHz and PIN = 6 dBm to 10 dBm)
Frequency Range DCS1800 Input Power DCS1800 Control Voltage Range Control Current Into Vapc Leakage Current f2 PINDCS VAPC lAPC ILEAKAGE — — — — VCC = 3.2 V VAPC = 0 V VBS = 0 V PINDCS = 8 dBm POUTDCS = 31.5 dBm PINDCS = 8 dBm PINDCS = 8 dBm VCC = 2.7 V TCASE = –20 °C to +85 °C 1710 6 0.2 — — — 8 — 60 5 1785 10 2.7 — — MHz dBm V µA µA
Efficiency DCS1800 DCS 2nd and 3rd Harmonic Distortion Output Power DCS1800
ηDCS H2DCS POUTDCS POUTDCS
38.2 –40.5 31.5 29.5
45.0 –50 32 —
— — — —
% dBc dBm dBm
Input VSWR Isolation DCS1800 Stability Condition VSWR(LOAD) (no spurious oscillation > –35 dBm)
VSWR(IN) All — PINDCS = 8 dBm APC = 0.2 V —
— —
1.5:1 –45
2:1 –33
— dBm
—
—
—
8:1 all angles 10:1 all angles –76
—
Load Mismatch VSWR(LOAD) (no damage/degradation) Noise Floor DCS1800
— —
— PINDCS = 8 dBm BW = 100 kHz fo ±20 MHz offset POUTDCS = 31.5 dBm —
— —
— —
— dBm
Full Power Control Voltage Bandselect Thresholds:
— GSM VBSLMAX DCS VBSHMIN
—
2.0 —
— 0.5 —
— V V µsec
2.0 POUTDCS = 31.5 dBm — 1.8
Rise Time and Fall Time unless specified otherwise
—
NOTE(S): TCASE = 25 °C, RL = 50 Ω, puls.