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2SB566

SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRI...


SavantIC

2SB566

File DownloadDownload 2SB566 Datasheet


Description
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION ·With TO-220C package ·Complement to type 2SD476/476A APPLICATIONS ·For low frequency power amplifier power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SB566 VCEO Collector-emitter voltage 2SB566A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collectorl power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -60 -5 -4 -8 40 150 -55~150 V A A W CONDITIONS Open emitter VALUE -70 -50 V UNIT V SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage 2SB566 IC=-50mA; RBE== 2SB566A IE=-10µA; IC=0 IC=-2 A;IB=-0.2 A IC=-2 A;IB=-0.2 A VCB=-50V; IE=0 IC=-0.1A ; VCE=-4V IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-4V CONDITIONS IC=-10µA ; IE=0 SYMBOL V(BR)CBO 2SB566 2SB566A MIN -70 -50 TYP. MAX UNIT V V(BR)CEO Collector-emitter breakdown voltage V -60 -5 -1.0 -1.2 -1 35 60 15 200 MHz V V V µA V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 fT Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC curren...




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